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product specification www.jmnic.com jm nic silicon power transistors 2SD1589 description ? ? with to-220fa package ? darlington ? complement to type 2sb1098 ? low speed switching applications ? low frequency power amplifier ? low speed switching industrial use pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220fa) and symbol absolute maximum ratings at tc=25 ?? symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current-peak 8 a i b base current (dc) 0.5 a p c collector power dissipation t a =25 ?? 1.5 w p c collector power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
product specification www.jmnic.com jm nic silicon power transistors 2SD1589 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a , i b =0 60 v v cesat collector-emitter saturation voltage i c =3a i b =3ma 1.5 v v besat emitter-base saturation voltage i c =3a i b =3ma 2.0 v i cbo collector cut-off current v cb =100v i e =0 1 | a h fe-1 dc current gain i c =3a ; v ce =2v 2000 15000 h fe-2 dc current gain i c =5a ; v ce =2v 500 switching times t on turn-on time 1.0 | s t s storage time 3.5 | s t f fall time i c =3a ;i b1 =3ma i b2 =-3ma; v cc ?? 50v r l =16.7 |? 1.2 | s product specification www.jmnic.com jm nic silicon power transistors 2SD1589 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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